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| inchange semiconductor product specification silicon npn power transistors 2SD2029 description ? with to-3pl package ? complement to type 2sb1347 ? wide area of safe operation ? high transition frequency applications ? optimum for the output stage of a hi-fi audio amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i cm collector current-peak 20 a t a =25 ?? 3.5 p c collector power dissipation t c =25 ?? 120 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pl) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2029 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 160 v v cesat collector-emitter saturation voltage i c =8a ;i b =0.8a 2.0 v v be base-emitter voltage i c =8a ; v ce =5v 1.8 v i cbo collector cut-off current v cb =160v; i e =0 50 | a i ebo emitter cut-off current v eb =3v; i c =0 50 | a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 60 200 h fe-3 dc current gain i c =8a ; v ce =5v 20 f t transition frequency i c =0.5a ; v ce =5v;f=1mhz 20 mhz c ob collector output capacitance i e =0;f=1mhz;v cb =10v 210 pf ? h fe-2 classifications q s p 60-120 80-160 100-200 inchange semiconductor product specification 3 silicon npn power transistors 2SD2029 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.50mm) inchange semiconductor product specification 4 silicon npn power transistors 2SD2029 |
Price & Availability of 2SD2029
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